型号:

SUM110N06-3M9H-E3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET N-CH 60V 110A D2PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SUM110N06-3M9H-E3 PDF
产品目录绘图 SUB, SUM Series
标准包装 800
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 110A
开态Rds(最大)@ Id, Vgs @ 25° C 3.9 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大) 4.5V @ 250µA
闸电荷(Qg) @ Vgs 300nC @ 10V
输入电容 (Ciss) @ Vds 15800pF @ 25V
功率 - 最大 3.75W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 TO-263(D2Pak)
包装 带卷 (TR)
产品目录页面 1661 (CN2011-ZH PDF)
其它名称 SUM110N06-3M9H-E3-ND
SUM110N06-3M9H-E3TR
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